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DMG6601LVT-7

Manufacturer:

Diodes Incorporated

Mfr.Part #:

DMG6601LVT-7

Datasheet:
Description:

MOSFETs TSOT-26 SMD/SMT N-Channel, P-Channel number of channels:2 850 mW 30 V Continuous Drain Current (ID):2.5 A 12.3 nC, 13.8 nC

ParameterValue
Length2.9 mm
Width1.6 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins26
Height900 µm
PackagingReel
Lead FreeLead Free
RoHSCompliant
REACH SVHCNo SVHC
Contact PlatingGold
Max Power Dissipation850 mW
Power Dissipation850 mW
Number of Channels2
Input capacitance422 pF
Continuous Drain Current (ID)2.5 A
Rds On Max55 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time1.7 ns
Turn-Off Delay Time18.3 ns
Rise Time4.6 ns
Gate Charge12.3 nC, 13.8 nC
Drain to Source Resistance70 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)12 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541290080
Gate to Source Threshold Voltage500 mV, 400 mV
FET Type(Transistor Polarity)N-Channel, P-Channel

Stock: 5324

Distributors
pcbx
Unit Price$0.11299
Ext.Price$0.11299
QtyUnit PriceExt.Price
1$0.11299$0.11299
10$0.10108$1.01080
50$0.09043$4.52150
100$0.08040$8.04000
500$0.07149$35.74500
1000$0.06831$68.31000
3000$0.06527$195.81000
5000$0.06184$309.20000